Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?
نویسندگان
چکیده
As MOSFETs are scaled into the deep sub-micron (decanano) regime, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. It has already been demonstrated that the density gradient approach can be successfully calibrated in respect of vertical quantum confinement at the Si/SiO2 interface and can reproduce accurately the quantum mechanical threshold voltage shift. In this paper we investigate the extent to which the density gradient approach can reproduce direct source-drain tunnelling in short double gate MOSFET devices.
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